C P Ewels et al 1996 Semicond. Sci. Technol. 11 502 doi:10.1088/0268-1242/11/4/007
Vacancy- and acceptor-H complexes in InP
C P Ewels
, S Öberg
, R Jones, B Pajot§ and P R Briddon||
It has been suggested that iron in InP is compensated by a donor, related to the 
local vibrational mode and previously assigned to the fully hydrogenated indium vacancy, 
. Using AIMPRO, an ab initio local density functional cluster code, we find that acts as a single shallow donor. It has a triplet vibrational mode at around this value, consistent with this assignment. We also analyse the other hydrogenated vacancies 
, and determine their structure, vibrational modes, and charge states. Substitutional group II impurities also act as acceptors in InP, but can be passivated by hydrogen. We investigate the passivation of beryllium by hydrogen and find that the hydrogen sits at a bond-centred site and is bonded to its phosphorus neighbour. Its calculated vibrational modes are in good agreement with experiment.
- PACS
-
61.72.J- Point defects and defect clusters
61.72.uj III–V and II–VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
- Subjects
- Dates
-
Issue 4 (April 1996)
Received 20 November 1995, accepted for publication 3 January 1996
-
Vacancy- and acceptor-H complexes in InP
C P Ewels et al 1996 Semicond. Sci. Technol. 11 502
-
Theoretical studies on nitrogen - oxygen complexes in silicon
Adam Gali et al 1996 J. Phys.: Condens. Matter 8 7711
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Invariant Randers metrics on homogeneous Riemannian manifolds
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N. Iro and L. D. Deming 2010 ApJ 712 218
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Thermal isolation of microchip reaction chambers for rapid non-contact DNA amplification
Christopher J Easley et al 2007 J. Micromech. Microeng. 17 1758
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