A V Skazochkin et al 1995 Semicond. Sci. Technol. 10 634 doi:10.1088/0268-1242/10/5/011
A V Skazochkin, Yu K Krutogolov and Yu I Kunakin
Show affiliationsThe effect on point defects of annealing in a phosphorus vapour is studied on GaP:N layers grown by vapour phase epitaxy. When the pressure P of the phosphorus (P4) vapour is varied, the concentration of the deep centre, thermally activated with an activation energy of 0.24+or-0.01 eV given by DLTS, exhibits P-1/4 behaviour, which suggests that this centre is related to phosphorus vacancies. Based on the experimental data obtained, the known models of the nitrogen-related deep centre are analysed and the formation of such a centre is considered in the case when the background Si is the dominant donor impurity. The centre is shown to differ from defects formed with the participation of group VI elements, and a model of the centre is proposed.
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
Issue 5 (May 1995)
A V Skazochkin et al 1995 Semicond. Sci. Technol. 10 634
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