E Grunbaum et al 1995 Semicond. Sci. Technol. 10 627 doi:10.1088/0268-1242/10/5/010
E Grunbaum, E Napchan, Z Barkay, K Barnham, J Nelson, C T Foxon, J S Roberts and D B Holt
Show affiliationsA new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are compared with values obtained by calculations using a Monte Carlo simulation program of electron trajectories. Values for diffusion lengths obtained by this method from five AlGaAs and GaAs p-i-n and p-n solar cells are compared with values given in the literature.
84.60.Jt Photoelectric conversion: solar cells and arrays
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
85.60.Bt Optoelectronic device characterization, design, and modeling
Issue 5 (May 1995)
E Grunbaum et al 1995 Semicond. Sci. Technol. 10 627
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