M A Kaliteevski et al 1995 Semicond. Sci. Technol. 10 624 doi:10.1088/0268-1242/10/5/009
M A Kaliteevski, A V Kavokin, A M Mintairov, G R Pozina and M A Sinitsyn
Show affiliationsRaman scattering (RS) and photoluminescence (PL) spectra of InxGa1-xAs (x=0.05-0.18) grown by the metal organic chemical vapour deposition (MOCVD) method at different substrate temperatures (Ts) have been studied. For x>0.1 the LO-phonon bands of the (100)(InAs)1(GaAs)1 monolayer superlattice (MS) phase are observed in the as spectra. It is found that for x=0.12-0.16 the increase of Ts from 650 to 700 degrees C results in a 40 meV red shift of the 1.6 K PL peak. A model is suggested attributing this red shift to the exciton localization energy at the InAs-type antiphase boundaries between (InAs)1(GaAs)1 MS domains.
78.30.Fs III-V and II-VI semiconductors
78.67.Pt Multilayers; superlattices
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
Condensed matter: electrical, magnetic and optical
Issue 5 (May 1995)
M A Kaliteevski et al 1995 Semicond. Sci. Technol. 10 624
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