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Chinese Physics Letters Volume 26 Number 11 Create an alert RSS this journal

Gong Yue-Feng et al 2009 Chinese Phys. Lett. 26 118101 doi:10.1088/0256-307X/26/11/118101

Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Gong Yue-Feng1,2, Song Zhi-Tang1, Ling Yun1, Liu Yan1 and Feng Song-Lin1

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Abstract References

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

A three-dimensional finite element model for phase change random access memory (PCRAM) is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure (HS) and the ring-type contact in bottom electrode (RIB) structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interfacial layer and building a new device structure. The simulation results indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.


PACS

84.30.Sk Pulse and digital circuits

82.45.Fk Electrodes

07.20.Hy Furnaces; heaters

Subjects

Electronics and devices

Instrumentation and measurement

Chemical physics and physical chemistry

Dates

Issue 11 (November 2009)

Received 6 April 2009



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