Sang Li-Wen et al 2009 Chinese Phys. Lett. 26 117801 doi:10.1088/0256-307X/26/11/117801
Sang Li-Wen1, Qin Zhi-Xin1, Fang Hao1, Zhang Yan-Zhao1, Li Tao1, Xu Zheng-Yu1, Yang Zhi-Jian1, Shen Bo1, Zhang Guo-Yi1, Li Shu-Ping2, Yang Wei-Huang2, Chen Hang-Yang2, Liu Da-Yi2 and Kang Jun-Yong2
Show affiliationsWe report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved.
85.60.Jb Light-emitting devices
61.72.Lk Linear defects: dislocations, disclinations
85.60.Bt Optoelectronic device characterization, design, and modeling
Condensed matter: electrical, magnetic and optical
Issue 11 (November 2009)
Received 3 July 2009
Sang Li-Wen et al 2009 Chinese Phys. Lett. 26 117801
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