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Chinese Physics Letters Volume 26 Number 11 Create an alert RSS this journal

Ma Hai-Lin and Fan Duo-Wang 2009 Chinese Phys. Lett. 26 117302 doi:10.1088/0256-307X/26/11/117302

Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation

Ma Hai-Lin1,2 and Fan Duo-Wang1,2

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Abstract References Cited By

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

We prepare the gallium oxide (β-Ga2O3) nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals that β-Ga2O3 nanobelts with a breadth less than 100 nm and length of several micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.


PACS

81.16.-c Methods of nanofabrication and processing

81.05.Hd Other semiconductors

81.15.Ef Vacuum deposition

07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

61.46.-w Structure of nanoscale materials

68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties

Subjects

Instrumentation and measurement

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Nanoscale science and low-D systems

Dates

Issue 11 (November 2009)

Received 30 July 2009



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