Quick search Find article
Quick search
Find article

Spin Relaxation of Electrons in Single InAs Quantum Dots

Ma Shan-Shan, Dou Xiu-Ming, Chang Xiu-Ying, Sun Bao-Quan, Xiong Yong-Hua, Niu Zhi-Chuan and Ni Hai-Qiao

Show affiliations


CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction.


PACS

78.67.Hc Quantum dots

78.55.Cr III-V semiconductors

71.70.Jp Nuclear states and interactions

73.21.La Quantum dots

71.35.-y Excitons and related phenomena

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 11 (November 2009)

Received 1 July 2009



View by subject




Export








Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.