Yang Ling et al 2009 Chinese Phys. Lett. 26 117104 doi:10.1088/0256-307X/26/11/117104
Yang Ling, Hao Yue, Ma Xiao-Hua, Quan Si, Hu Gui-Zhou, Jiang Shou-Gao and Yang Li-Yuan
Show affiliationsThe current slump of different recipes of SiNx passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process, which has impacted on the current collapse of SiNx passivated devices. We analyze the pulsed IDS – VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases (VGS0, VDS0) of (0, 0), (−6, 0), (−6, 15) and (0, 15)V. The possible mechanisms are the traps in SiNx passivation capturing the electrons and the surface states at the SiNx/AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.
73.20.-r Electron states at surfaces and interfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
85.30.De Semiconductor-device characterization, design, and modeling
Issue 11 (November 2009)
Received 24 April 2009
Yang Ling et al 2009 Chinese Phys. Lett. 26 117104
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