Liu Bing-Ce et al 2009 Chinese Phys. Lett. 26 117101 doi:10.1088/0256-307X/26/11/117101
Liu Bing-Ce, Liu Ci-Hui, Fu Zhu-Xi and Yi Bo
Show affiliationsThe influence of ZnO microstructure on electrical barriers is investigated using capacitance-voltage (C – V), current-voltage (I – V) and deep level transient spectroscopy (DLTS) measurements. A deep level center located at Ec – 0.24 eV obtained by DLTS in the ZnO films is an intrinsic defect related to Zni. The surface states in the ZnO grains that have acceptor behavior of capturing electrons from Zni defects result in the formation of grain barriers. In addition, we find that the current transport is dominated by grain barriers after annealing at 600° C at O2 ambient. With the increment of the annealing temperature, the current transport mechanism of ZnO/Si heterostructure is mainly dominated by thermo-emission.
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
61.72.Mm Grain and twin boundaries
61.72.Cc Kinetics of defect formation and annealing
Condensed matter: electrical, magnetic and optical
Issue 11 (November 2009)
Received 8 April 2009
Liu Bing-Ce et al 2009 Chinese Phys. Lett. 26 117101
M Krug et al 2009 New J. Phys. 11 105051
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