Liu Xu-Yan et al 2009 Chinese Phys. Lett. 26 116802 doi:10.1088/0256-307X/26/11/116802
Liu Xu-Yan1,2, Liu Wei-Li1, Ma Xiao-Bo1,2, Chen Chao1,2, Song Zhi-Tang1 and Lin Cheng-Lu1
Show affiliationsUltra-thin and near-fully relaxed SiGe substrate is fabricated using a modified Ge condensation technique, and then a 25-nm-thick biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGeon-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiGe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra, and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000°C According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones.
68.55.A- Nucleation and growth
78.30.Am Elemental semiconductors and insulators
68.37.Lp Transmission electron microscopy (TEM)
61.72.Cc Kinetics of defect formation and annealing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Condensed matter: electrical, magnetic and optical
Issue 11 (November 2009)
Received 23 October 2008
Liu Xu-Yan et al 2009 Chinese Phys. Lett. 26 116802
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