Lu Zhong-Lin et al 2009 Chinese Phys. Lett. 26 116102 doi:10.1088/0256-307X/26/11/116102
Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy
Lu Zhong-Lin1,2,3, Zou Wen-Qin3, Xu Ming-Xiang1, Zhang Feng-Ming3 and Du You-Wei3
Show affiliationsCONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10−4 Ω
cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.
- PACS
-
68.55.-a Thin film structure and morphology
78.70.Dm X-ray absorption spectra
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
- Subjects
- Dates
-
Issue 11 (November 2009)
Received 5 August 2009
-
Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy
Lu Zhong-Lin et al 2009 Chinese Phys. Lett. 26 116102
-
Self-avoiding walks and polygons on the triangular lattice
Iwan Jensen J. Stat. Mech. (2004) P10008
-
Decoherence and quantum nondemolition measurements in the LIGO project
V B Braginsky 1998 Phys. Scr. 1998 122
-
On particle creation in the flat FRW chart of de Sitter spacetime
Jaume Haro and Emilio Elizalde 2008 J. Phys. A: Math. Theor. 41 372003
-
Tumbleweeds and airborne gravitational noise sources for LIGO
Teviet Creighton 2008 Class. Quantum Grav. 25 125011
-
Spreading dynamics of power-law fluid droplets
Zhan-Peng Liang et al 2009 J. Phys.: Condens. Matter 21 464117
-
Recent results and future challenges for large scale particle-in-cell simulations of plasma-based accelerator concepts
C Huang et al 2009 J. Phys.: Conf. Ser. 180 012005
-
Debundling of single-walled carbon nanotubes by using natural polyelectrolytes
Yangqiao Liu et al 2007 Nanotechnology 18 365702
-
Low-current focused-ion-beam induced deposition of three-dimensional tungsten nanoscale conductors
Wuxia Li and P A Warburton 2007 Nanotechnology 18 485305
-
Plasmonic components fabrication via nanoimprint
Alexandra Boltasseva 2009 J. Opt. A: Pure Appl. Opt. 11 114001
Users also read
What's this?- Grain Size Effect on Electrical Conductivity and Giant Magnetoresistance of Bulk Magnetic Polycrystals
- Design of a High-Nonlinearity Single-Mode Holey Fiber with Flattened Dispersion around 800 nm
- Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
Related review articles
What's this?- Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation
- The structural analysis possibilities of reflection high energy electron diffraction
- Molecular dewetting on insulators