Sun Wen-Feng et al 2009 Chinese Phys. Lett. 26 114210 doi:10.1088/0256-307X/26/11/114210
Sun Wen-Feng1, Wang Xin-Ke2 and Zhang Yan1
Show affiliationsA method to measure the refractive index for high reflectance materials in the terahertz range with terahertz time domain reflection spectroscopy is proposed. In this method, the THz waveforms reflected by a silicon wafer and high reflectance sample are measured respectively. The refractive index of the silicon wafer, measured with the THz time domain transmission spectroscopy, is used as a reference in the THz time domain reflective spectroscopy. Therefore, the complex refractive index of the sample can be obtained by resorting to the known reflective index of the silicon and the Fresnel law. To improve the accuracy of the phase shift, the Kramers–Kronig transform is adopted. This method is also verified by the index of the silicon in THz reflection spectroscopy. The bulk metal plates have been taken as the sample, and the experimentally obtained metallic refractive indexes are compared with the simple Drude model.
Issue 11 (November 2009)
Received 11 August 2009
Sun Wen-Feng et al 2009 Chinese Phys. Lett. 26 114210
X J Hao et al 2009 Nanotechnology 20 485703
Hyoung-Gyu Choi et al 2009 J. Opt. A: Pure Appl. Opt. 11 125101
H Lichtenberg et al 2009 J. Phys.: Conf. Ser. 190 012203
Michael J Conterio et al 2008 J. Phys.: Condens. Matter 20 255225
Toshiharu Tominaka 2009 Supercond. Sci. Technol. 22 125025
Luo Wei et al 2009 Chinese Phys. Lett. 26 114101
N A Katcho et al 2009 J. Phys.: Conf. Ser. 190 012129
J Singh et al 2009 J. Phys.: Conf. Ser. 190 012159
M I Boyanov et al 2009 J. Phys.: Conf. Ser. 190 012193