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Chinese Physics Letters Volume 26 Number 11 Create an alert RSS this journal

Cao Feng et al 2009 Chinese Phys. Lett. 26 114203 doi:10.1088/0256-307X/26/11/114203

Influence of Post-Annealing Temperature on Properties of Ta-Doped ZnO Transparent Conductive Films

Cao Feng, Wang Yi-Ding, Yin Jing-Zhi, Cong Meng-Long and Han Liang-Yu

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Abstract References

FUNDAMENTAL AREAS OF PHENOMENOLOGY (INCLUDING APPLICATIONS)

Ta-doped ZnO transparent conductive films are deposited on glass substrates by rf sputtering at 300 °C. The influence of the post-annealing temperature on the structural, morphologic, electrical, and optical properties of the films is investigated by x-ray diffraction, Hall measurement, and optical transmission spectroscopy. The lowest resistivity of 3.5 × 10−4 Ω.cm is obtained from the film annealed at 400 °C in N2. The average optical transmittance of the films is over 90%. The optical bandgap is found to decrease with the increase of the annealing temperature.


PACS

68.55.-a Thin film structure and morphology

78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

73.61.Ga II-VI semiconductors

78.66.Hf II-VI semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 11 (November 2009)

Received 4 January 2009



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