Xie Zi-Li et al 2008 Chinese Phys. Lett. 25 2614 doi:10.1088/0256-307X/25/7/077
Xie Zi-Li1, Zhang Rong1, Han Ping1, Zhou Sheng-Ming2, Liu Bin1, Xiu Xiang-Qian1, Chen Peng1, Shi Yi1 and Zheng You-Dou1
Show affiliationsWereport the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a γ-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 × 10 μm2 by AFM scan area. The XRD spectra show that the materials grown on γ-LiAlO2 (100) have 〈1 – 100〉 m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the γ-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1–3 V.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Condensed matter: electrical, magnetic and optical
Issue 7 (July 2008)
Received 5 November 2007
Xie Zi-Li et al 2008 Chinese Phys. Lett. 25 2614
Paul M. Harvey et al. 2008 ApJ 680 495
Yu Tian et al 2009 Smart Mater. Struct. 18 125021
G. Narayanan et al. 2002 ApJ 565 319
P E Arratia et al 2009 New J. Phys. 11 115006
L R Gasques et al 2005 J. Phys. G: Nucl. Part. Phys. 31 S1859
Tetsuichi Kishishita et al 2009 ApJ 697 L1
H. W. W. Spoon et al. 2006 ApJ 638 759
Ye Song et al 2007 J. Phys. D: Appl. Phys. 40 3541
Vladislav A Bogoyavlenskiy 2002 J. Phys. A: Math. Gen. 35 2533