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Structure and Photoluminescence of Polycrystalline MgxZn1−xO Films

Zhao Yi-Kun1, Lian Jie1, Wang Qing-Pu1, Zhang Xi-Jian2, Zhang Sa-Sa1 and Wang Gong-Tang3

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Different photoluminescence (PL) spectra are observed for rf magnetron sputtered polycrystalline Mg0.25Zn0.75O and Mg0.37Zn0.63O films on silicon substrates when excited by different wavelengths. When the excitation wavelength is 280 nm, a UV emission peak at 370 nm and a blue peak at 462 nm are generated for the Mg0.25Zn0.75O film, and those two peaks for the Mg0.37Zn0.63O film shift to 366 nm and 466 nm, respectively. The wavelengths of the PL peaks are related to the excitation wavelength. The stronger peak is obtained in the blue band due to a large number of oxygen vacancies caused by excess Zn and Mg atoms, while the weaker peak is obtained in the ultraviolet band.


PACS

78.55.Et II-VI semiconductors

68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

71.20.Nr Semiconductor compounds

78.66.Hf II-VI semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 11 (November 2005)

Received 9 June 2005



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