Yu Hong-Bo et al 2004 Chinese Phys. Lett. 21 1323 doi:10.1088/0256-307X/21/7/039
Yu Hong-Bo, Chen Hong, Li Dong-Sheng and Zhou Jun-Ming
Show affiliationsWe investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a–c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized.
Condensed matter: electrical, magnetic and optical
Issue 7 (July 2004)
Received 15 March 2004
Yu Hong-Bo et al 2004 Chinese Phys. Lett. 21 1323
F. Gazeau et al 1997 Europhys. Lett. 40 575
Eduardo G Vergini and David Schneider 2005 J. Phys. A: Math. Gen. 38 587
Luzi Bergamin et al JHEP11(2004)021
J R Persson 2007 Phys. Scr. 76 449
Duy Pham et al 2002 Smart Mater. Struct. 11 668
J M Bostock-Smith 2008 Phys. Educ. 43 265
N J Wilson et al 2000 J. Phys. B: At. Mol. Opt. Phys. 33 L341
Takashi Maruyama et al 2009 J. Phys.: Conf. Ser. 190 012018
E Prugovecki 1977 J. Phys. A: Math. Gen. 10 543