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Preparation and Properties of GaN Films on GaAs Substrates

Yang Ying-Ge1, Ma Hong-Lei2, Ma Jin2 and Zhang Ya-Fei1

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Polycrystalline gallium nitride films with hexagonal structure were prepared by a post-nitridation technique. A strong blue photoluminescence located at 458 nm and a UV photoluminescence located at 368 nm were observed at room temperature. The 368 nm peak is PL from band-edge emission. The blue luminescence is attributed to the transition from deep donor level to the valence band.


PACS

68.55.-a Thin film structure and morphology

78.66.Fd III-V semiconductors

81.65.Lp Surface hardening: nitridation, carburization, carbonitridation

78.40.Fy Semiconductors

78.55.Cr III-V semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 5 (May 2004)

Received 16 October 2003



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