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Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer: Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

Wen Qi-Ye, Zhang Huai-Wu, Jiang Xiang-Dong, Shi Yu, Tang Xiao-Li and Zhang Wan-Li

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We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr alloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300 degrees C but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300 degrees C for 1 h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayer have strong potentials for spin-electronic devices including magnetic random access memory.


PACS

75.47.De Giant magnetoresistance

75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

75.60.Nt Magnetic annealing and temperature-hysteresis effects

75.50.Kj Amorphous and quasicrystalline magnetic materials

75.60.Ch Domain walls and domain structure

Subjects

Electronics and devices

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Dates

Issue 5 (May 2004)

Received 24 December 2003



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