Dai Xian-Qi et al 2004 Chinese Phys. Lett. 21 527 doi:10.1088/0256-307X/21/3/031
Dai Xian-Qi1,2, Wu Hua-Sheng2, Xie Mao-Hai2, Xu Shi-Hong2 and Tong Shuk-Yin3
Show affiliationsThe diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating substrate Ga atoms, and the outmost adlayer Ga adatoms exist randomly at the T4 or H3 sites. A very different diffusivity of N adatoms on a Ga-rich GaN(0001) surface has been found. The excess Ga adatoms on a GaN(0001) surface reduce the diffusion barrier by 0.75 eV and influence the migration path. It seems that bilayer Ga adatoms are helpful for N atom diffusion.
68.43.Jk Diffusion of adsorbates, kinetics of coarsening and aggregation
Issue 3 (March 2004)
Received 17 November 2003
Dai Xian-Qi et al 2004 Chinese Phys. Lett. 21 527
R F Boivin and E E Scime 2005 Plasma Sources Sci. Technol. 14 283
Hu Yi-Fan et al 2005 Chinese Phys. Lett. 22 1214
D Pastor et al 2005 Semicond. Sci. Technol. 20 374
Y K Su et al 2004 Semicond. Sci. Technol. 19 389
Chengshan Xue et al 2004 Nanotechnology 15 724
Zuxin Ye et al 2008 Nanotechnology 19 085709
Zuxin Ye et al 2009 Nanotechnology 20 045704
E Ben-Naim and P L Krapivsky 2006 J. Phys. A: Math. Gen. 39 L301
Grant R. Tremblay et al. 2009 ApJS 183 278