Lu Min et al 2003 Chinese Phys. Lett. 20 1552 doi:10.1088/0256-307X/20/9/341
Lu Min, Yang Hua, Li Zi-Lan, Yang Zhi-Jian, Li Zhong-Hui, Ren Qian, Jin Chun-Lai, Lu Shu, Zhang Bei and Zhang Guo-Yi
Show affiliationsThe effects of dopants on the defects of GaN films were investigated by using different methods, such as wet, etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the, etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample. The effects of the dopants on the, etching pits were discussed.
68.55.A- Nucleation and growth
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Condensed matter: electrical, magnetic and optical
Issue 9 (September 2003)
Received 10 March 2003
Lu Min et al 2003 Chinese Phys. Lett. 20 1552
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