Li Zhong-Hui et al 2003 Chinese Phys. Lett. 20 1350 doi:10.1088/0256-307X/20/8/349
Li Zhong-Hui, Yang Zhi-Jian, Qin Zhi-Xin, Tong Yu-Zhen, Yu Tong-Jun, Lu Shu, Yang Hua and Zhang Guo-Yi
Show affiliationsThe near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2 nm with narrow FWHM of 14.3 nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from 10 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.
Issue 8 (August 2003)
Received 27 March 2003
Li Zhong-Hui et al 2003 Chinese Phys. Lett. 20 1350
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