Lu Min et al 2003 Chinese Phys. Lett. 20 398 doi:10.1088/0256-307X/20/3/324
Lu Min1,2,3, Chang Xin4, Li Zi-Lan1,2,3, Yang Zhi-Jian1,2,3, Zhang Guo-Yi1,2,3 and Zhang Bei1,2,3
Show affiliationsHigh quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1:3) and molten KOH exhibit notably different, etching pit densities of 5×108/cm2 and 4×107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1:3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
Issue 3 (March 2003)
Received 11 November 2002
Lu Min et al 2003 Chinese Phys. Lett. 20 398
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