Gu Xiao-Xiao et al 2003 Chinese Phys. Lett. 20 1822 doi:10.1088/0256-307X/20/10/347
Gu Xiao-Xiao1, Huang Da-Ming1 and Morkoc Hadis2
Show affiliationsWe have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostructure, as-grown islands or, etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of, etched pits have lower surface potential as compared with the as-grown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface.
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.30.+y Surface double layers, Schottky barriers, and work functions
Issue 10 (October 2003)
Received 7 May 2003
Gu Xiao-Xiao et al 2003 Chinese Phys. Lett. 20 1822
S D Bartlett et al 2002 J. Phys. A: Math. Gen. 35 5625
A V Shuldiner and V A Zakrevskii 2002 J. Phys.: Condens. Matter 14 9555
W. D. Langer et al 1996 ApJ 468 L41
Shang Ming-Sheng and Zhang Zi-Ke 2009 Chinese Phys. Lett. 26 118903
Jin Hong et al 1998 J. Phys. A: Math. Gen. 31 L515
Zbigniew M Stadnik and Guowei Zhang 2005 J. Phys.: Condens. Matter 17 6599
Vladislav Popkov et al 2008 J. Phys. A: Math. Theor. 41 432002
M Valiente and D Petrosyan 2009 J. Phys. B: At. Mol. Opt. Phys. 42 121001
Sergio Albeverio and Andrew Khrennikov 1996 J. Phys. A: Math. Gen. 29 5515