Hu Gui-Qing et al 2003 Chinese Phys. Lett. 20 1811 doi:10.1088/0256-307X/20/10/344
Hu Gui-Qing1, Kong Xiang1, Wan Li1, Wang Yi-Qian1, Duan Xiao-Feng1, Lu Yuan2 and Liu Xiang-Lin2
Show affiliationsWe report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Issue 10 (October 2003)
Received 14 May 2003
Hu Gui-Qing et al 2003 Chinese Phys. Lett. 20 1811
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