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Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapour Deposition

Hu Gui-Qing1, Kong Xiang1, Wan Li1, Wang Yi-Qian1, Duan Xiao-Feng1, Lu Yuan2 and Liu Xiang-Lin2

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We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AlN buffer layers by the metal-organic chemical vapour deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.


PACS

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

71.55.Eq III-V semiconductors

68.37.Lp Transmission electron microscopy (TEM)

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Dates

Issue 10 (October 2003)

Received 14 May 2003



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