Chen Zhi-Zhong et al 2002 Chinese Phys. Lett. 19 375 doi:10.1088/0256-307X/19/3/327
Chen Zhi-Zhong1,2, Zhang Rong1, Zhu Jian-Min1, Qin Zhi-Xin2, Shen Bo1, Gu Shu-Lin1, Wang Feng1, Zheng You-Dou1, Zhang Guo-Yi2, Li Zhi-Feng3 and L. F. Kuech4
Show affiliationsWe have investigated the microstructures of GaN films laterally epitaxially overgrown (LEO) on Si(111) substrates using hydride vapour phase epitaxy. The threading dislocation density in the LEO GaN is reduced by about two orders. Different etching angles of the two sidewalls of SiO2 masks (66o and 90o) lead to the asymmetry of the LEO and cause the particular microstructures of LEO GaN. In micro-Raman spectra, the intensities vary weakly periodically about 5 µm perpendicular to the mask stripes. The indistinct selective growth in the top surface is discussed.
68.55.A- Nucleation and growth
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.Cf Surface cleaning, etching, patterning
Condensed matter: electrical, magnetic and optical
Issue 3 (March 2002)
Received 13 September 2001
Chen Zhi-Zhong et al 2002 Chinese Phys. Lett. 19 375
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