Suwit Kiravittaya et al 2009 Rep. Prog. Phys. 72 046502 doi:10.1088/0034-4885/72/4/046502
Suwit Kiravittaya1, Armando Rastelli2 and Oliver G Schmidt2
Show affiliationsWe present an overview on approaches currently employed to fabricate advanced quantum dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, i.e. In(Ga)As/GaAs and (Si)Ge/Si, are first introduced. Different quantum dot structures can be derived from In(Ga)As quantum dots by combining them with in situ etching, by layer stacking or by using them as stressors. Other fabrication methods include droplet epitaxy and multilayer deposition on hole patterned substrates.
The combination of bottom–up and top–down methods results in absolute position control of self-assembled quantum dots. We review these 'seeded quantum dot crystals' in detail. Finally, we discuss a promising approach to realize quantum dot crystals with controlled spatial and optical properties.
68.65.Hb Quantum dots (patterned in quantum wells)
Issue 4 (April 2009)
Received 28 October 2008, in final form 8 January 2009
Published 16 March 2009
Suwit Kiravittaya et al 2009 Rep. Prog. Phys. 72 046502
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