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Electron tunnelling in self-assembled monolayers

REVIEW ARTICLE

Wenyong Wang1, Takhee Lee2 and Mark A Reed3

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A review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented. Using SAMs of alkanethiols in a nanometre scale device structure, tunnelling is unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependences. Inelastic electron tunnelling spectroscopy exhibits clear vibrational modes of the molecules in the device, presenting direct evidence of the presence of molecules in the device.


PACS

73.40.Gk Tunneling

63.20.-e Phonons in crystal lattices

Subjects

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 3 (March 2005)

Received 26 July 2004

Published 31 January 2005



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