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Influence of surface stress in the determination of the (2 2 0) lattice spacing of silicon

L Ferroglio1, G Mana1, C Palmisano2,3 and G Zosi3

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We have examined the influence of surface stress in the measurement of the (2 2 0) lattice plane spacing of a Si crystal by combined x-ray and optical interferometry. By means of a finite element simulation we have obtained first a quantitative description of various non-linear displacement fields of the diffracting planes; the simulation indicates that surface stress does not cause a significant difference between bulk and surface lattice spacing. Subsequently, to quantify the effect of the above fields on the period of the interference fringes, we have solved numerically the perturbed Takagi–Taupin equations; these results indicate that the fringe period is determined by the atom spacing on the crystal entrance surface, whereas, intuitively, we might have expected this period to be a kind of average of the (2 2 0) lattice plane spacing. To corroborate our numerical calculations, we have found analytical expressions which allow us to isolate the contribution of the non-linear superficial terms on the measurement of the plane spacing.


PACS

68.35.Gy Mechanical properties; surface strains

81.40.Lm Deformation, plasticity, and creep

68.35.Md Surface thermodynamics, surface energies

62.20.F- Deformation and plasticity

Subjects

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 1 (February 2008)

Received 25 September 2007

Published 5 February 2008



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