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Accurate determination of the surface normal for the reliable measurement of ultra-thin SiO2 thickness by x-ray photoelectron spectroscopy

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Kyung Joong Kim1, Jong Shik Jang and Dae Won Moon

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[1]
International Technology Roadmap for Semiconductors http://public.itrs.net/

[2]
Seah M P 2004 J. Vac. Sci. Technol. A 22 1564
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[3]
Seah M P et al 2004 Surf. Interface Anal. 36 1269
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[4]
Seah M P 2005 Surf. Interface Anal. 37 300
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[5]
Seah M P and Spencer S J 2002 Surf. Interface Anal. 33 640
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[6]
Kim K J, Park K T and Lee J W 2006 Thin Solid Films 500 356
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[7]
Seah M P and Spencer S J 2005 Surf. Interface Anal. 37 731
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[8]
Kim K J and Moon D W 1998 Surf. Interface Anal. 26 9
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[9]
Seah M P and Spencer S J 2003 Surf. Interface Anal. 35 515
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[10]
Himpsel F J, McFeely F R, Taleb-Ibrahimi A, Yarmoff J A and Hollinger G 1988 Phys. Rev. B 38 6084
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