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Accurate determination of the surface normal for the reliable measurement of ultra-thin SiO2 thickness by x-ray photoelectron spectroscopy

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Kyung Joong Kim1, Jong Shik Jang and Dae Won Moon

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SHORT COMMUNICATION

Measurement of the thickness of SiO2 films on crystalline Si substrates was the subject of the key comparison (K-32) of the Surface Analysis Working Group of the Consultative Committee for Amount of Substance. X-ray photoelectron spectroscopy (XPS) gave the most reproducible results that are consistent with other reflectivity based methods. In addition, XPS is free from surface contamination effects. However, the emission angle of photoelectrons is one of the main sources of the uncertainty in the measured thickness. In this report, we propose a simple and reliable procedure to determine the surface normal for accurate control of the emission angle using an amorphous SiO2 overlayer on an amorphous Si substrate. The surface normal can be accurately determined from the condition that the estimated thickness of a SiO2 overlayer on an amorphous Si substrate measured must be the same for different emission angles. With the proposed calibration procedure, the surface normal can be determined precisely and the uncertainty of the electron emission angle can be evaluated.


PACS

68.55.-a Thin film structure and morphology

68.55.A- Nucleation and growth

79.60.Dp Adsorbed layers and thin films

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Dates

Issue 5 (October 2006)

Received 2 June 2006

Published 21 September 2006



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