R Goebel et al 1996 Metrologia 33 207 doi:10.1088/0026-1394/33/3/3
R Goebel, S Yilmaz and R Pello
Show affiliationsThe sensitivity of a series of silicon trap detectors has been measured as a function of beam polarization. Measurements and numerical simulation show that very small departures from the ideal orientation of the photodiodes mounted in the trap induces a significant sensitivity to the state of polarization of the beam. Consequences of this polarization dependence for the use of trap detectors as transfer detectors in high-accuracy applications, particularly in cryogenic radiometry, are discussed.
29.40.Wk Solid-state detectors
07.60.Dq Photometers, radiometers, and colorimeters
85.60.Dw Photodiodes; phototransistors; photoresistors
07.20.Mc Cryogenics; refrigerators, low-temperature equipment
Accelerators, beams and electromagnetism
Instrumentation and measurement
Issue 3 (1996)
R Goebel et al 1996 Metrologia 33 207
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