A J F Metherell and T J Quinn 1986 Metrologia 22 87 doi:10.1088/0026-1394/22/2/003
A J F Metherell1 and T J Quinn1,2
Show affiliationsAdvances in crystal growth technology together with advances in preferential etching techniques may make it possible to produce a nearly perfect single crystal of silicon in the form of a 111 tetrahedron. The density homogeneity of such an artifact together with the high precision to which its centre of mass could be located with respect to its faces would suggest its use as an attracting mass in experiments to determine the gravitational constant G. In this paper a closed-form expression for the gravitational field of a 111 tetrahedron is derived.
06.20.Jr Determination of fundamental constants
81.10.-h Methods of crystal growth; physics of crystal growth
Issue 2 (1986)
Received 5 July 1985
A J F Metherell and T J Quinn 1986 Metrologia 22 87
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