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Crystal orientation by cleavage plane reflected laser beam

J E Greene and J M Whelan

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An apparatus is described for the orientation and transfer of single crystals which have well-defined cleavage planes. It is based upon the reflection of a 6328 AA He-Ne laser beam from the cleavage planes. Orientation and subsequent transfer of a GaAs crystal to a wafering machine can be done with a cumulative error of less than 0.15 degrees .


PACS

61.50.-f Structure of bulk crystals

42.55.Lt Gas lasers including excimer and metal-vapor lasers

Subjects

Optics, quantum optics and lasers

Condensed matter: structural, mechanical & thermal

Dates

Issue 10 (October 1972)



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