Quick search Find article
Quick search
Find article

The thermal resistivity of diamond heat-sink bond materials

P R W Hudson

Show affiliations


The thermal resistivity of diamond heat-sink bonds in the form of sputtered titanium and gold films has been measured from 1.2 to 300K. The addition of epitaxial nickel to the diamond lattice improved the thermal conductivity of the bond by approximately 2/3 at room temperature. The standard metallic bond was found to be equivalent to approximately 1.2 mm of type IIa diamond at room temperature. At low temperatures the standard bond resistivity was given by R=1.78*10-3T-2.3K m2 W-1, whereas phonon mismatch theory predicts R=7.35*10-3T-3K m2 W-1. These results suggest that electron heat transfer across the bond is very important.


PACS

81.15.Cd Deposition by sputtering

85.40.Sz Deposition technology

Subjects

Electronics and devices

Surfaces, interfaces and thin films

Dates

Issue 2 (1 February 1976)



View by subject




Export








Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.