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Threshold switching in gallium telluride single crystals

W I Milne and J C Anderson

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Gallium telluride single crystals have been grown and cleaved to form thin platelet specimens. Small-area contacts on opposite faces produce threshold switching characteristics when high fields are applied across them, while large-area contact produce memory switching. Detailed measurements of conductivity under DC and pulsed conditions are presented, and the threshold switching is interpreted in terms of a thermal mechanism.


PACS

72.20.My Galvanomagnetic and other magnetotransport effects

72.80.Jc Other crystalline inorganic semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 17 (15 November 1973)

Received 5 July 1973



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