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Room-temperature ferromagnetism and electrical properties of Cu2O/GaN heterostructures

T Peng, K Shen, H Wu, C Hu and C Liu1

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Single phase and epitaxial Cu2O thin films were synthesized by thermal oxidation of Cu films deposited on GaN/sapphire substrates using electron beam evaporation. A transition of the conduction type was observed when the vacuum annealing temperature was varied from 400 to 500 °C. Current–voltage characterization confirmed the transition and indicated the successful formation of p-Cu2O/n-GaN as well as n-Cu2O/n-GaN heterostructures. Weak room-temperature ferromagnetism appeared in the Cu2O/GaN heterostructures, which may have originated from the defects of the Cu2O films.


PACS

73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

75.50.Dd Nonmetallic ferromagnetic materials

81.40.Gh Other heat and thermomechanical treatments

73.61.Le Other inorganic semiconductors

68.55.-a Thin film structure and morphology

81.15.Ef Vacuum deposition

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 31 (11 August 2010)

Received 8 April 2010, in final form 25 June 2010

Published 23 July 2010



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