T Peng et al 2010 J. Phys. D: Appl. Phys. 43 315101 doi:10.1088/0022-3727/43/31/315101
T Peng, K Shen, H Wu, C Hu and C Liu1
Show affiliationsSingle phase and epitaxial Cu2O thin films were synthesized by thermal oxidation of Cu films deposited on GaN/sapphire substrates using electron beam evaporation. A transition of the conduction type was observed when the vacuum annealing temperature was varied from 400 to 500 °C. Current–voltage characterization confirmed the transition and indicated the successful formation of p-Cu2O/n-GaN as well as n-Cu2O/n-GaN heterostructures. Weak room-temperature ferromagnetism appeared in the Cu2O/GaN heterostructures, which may have originated from the defects of the Cu2O films.
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.50.Dd Nonmetallic ferromagnetic materials
81.40.Gh Other heat and thermomechanical treatments
73.61.Le Other inorganic semiconductors
Condensed matter: electrical, magnetic and optical
Issue 31 (11 August 2010)
Received 8 April 2010, in final form 25 June 2010
Published 23 July 2010
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