D Basu et al 2009 J. Phys. D: Appl. Phys. 42 092001 doi:10.1088/0022-3727/42/9/092001
D Basu, P Bhattacharya, W Guo and H Kum
Show affiliationsThe heteroepitaxial growth of type-B ferromagnetic MnAs on InP and lattice matched In0.53Ga0.47As has been investigated for the first time. In situ reflection high energy electron diffraction during molecular beam epitaxy and atomic force microscopy are used to study the reconstruction and morphology, respectively, of the MnAs surface. The in-plane magnetic properties of the film are studied by magneto-optic Kerr effect measurements. The Curie temperature is estimated to be 315 K. The coercivity of 35 nm films measured at room temperature and 10 K are 860 Oe and 1410 Oe, respectively. The measured in-plane magnetocrystalline anisotropy constants Ku1 and Ku2 for the film are 2.747 × 106 and 7.086 × 106 erg cm−3, respectively. The magnetization and hysteresis in the out-of-plane direction are characterized by a saturation magnetic field of 1.2 T and coercivity of 1600 Oe at 10 K.
68.55.A- Nucleation and growth
78.20.Ls Magnetooptical effects
75.50.Pp Magnetic semiconductors
68.37.Ps Atomic force microscopy (AFM)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
Issue 9 (7 May 2009)
Received 3 February 2009, in final form 13 March 2009
Published 6 April 2009
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