Journal of Physics D: Applied Physics
Volume 42
Number 7
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Feng Yang et al 2009 J. Phys. D: Appl. Phys. 42 072004 doi:10.1088/0022-3727/42/7/072004
Eight-logic memory cell based on multiferroic junctions
FREE ARTICLEFeng Yang1,2, Y C Zhou1,2,3, M H Tang1,2, Fen Liu1,2, Ying Ma1,2, X J Zheng1,2, W F Zhao1,2, H Y Xu1,2 and Z H Sun1,2
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Sixteen resistive states of a tunnel junction with a composite barrier
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Schottky barrier height and conduction mechanisms in ferroelectric bismuth titanate
Fen Liu et al Applied Physics Letters 2010 96 052102
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Simulation of electric displacement hysteresis and strain butterfly loops in perovskite ferroelectric films
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Eight-logic memory cell based on multiferroic junctions
Feng Yang et al 2009 J. Phys. D: Appl. Phys. 42 072004
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Zn-K edge EXAFS study of human nails
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Improvement of luminescence efficiency by electrical annealing in single-layer organic light-emitting diodes based on a conjugated dendrimer
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Local structure in single crystals of La-based high Tccuprates
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Studies on the effect of grain refinement and thermal processing on shape memory characteristics of Cu–Al–Ni alloys
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Toward a Unified Model for the "Diffuse Ionized Medium" in Normal and Starburst Galaxies
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Accumulation of 38 mg of bismuth in a cylindrical collector from a 2.5 mA ion beam
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