Feng Yang et al 2009 J. Phys. D: Appl. Phys. 42 072004 doi:10.1088/0022-3727/42/7/072004
Feng Yang1,2, Y C Zhou1,2,3, M H Tang1,2, Fen Liu1,2, Ying Ma1,2, X J Zheng1,2, W F Zhao1,2, H Y Xu1,2 and Z H Sun1,2
Show affiliationsA model is proposed for a device combining a multiferroic tunnel junction with a magnetoelectric (ME) film in which the magnetic configuration is controlled by the electric field. Calculations embodying the Green's function approach show that the magnetic polarization can be switched on and off by an electric field in the ME film due to the effect of elastic coupling interaction. Using a model including the spin-filter effect and screening of polarization charges, we have produced eight logic states of tunnelling resistance in the tunnel junction and have obtained corresponding laws that control them. The results provide some insights into the realization of an eight-logic memory cell.
85.75.Dd Magnetic memory using magnetic tunnel junctions
75.80.+q Magnetomechanical and magnetoelectric effects, magnetostriction
Issue 7 (7 April 2009)
Received 16 August 2008, in final form 12 February 2009
Published 19 March 2009
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