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Threshold ionization mass spectrometry in the presence of excited silane radicals

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T Moiseev1, D Chrastina1, G Isella1 and C Cavallotti2

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[1]

Plasma Composition by Mass Spectrometry in a Ar-SiH4-H2 LEPECVD Process During nc-Si Deposition

T. Moiseev et al  Plasma Chemistry and Plasma Processing 2011 
CrossRef 
[2]

Energy distributions of H and H2 in a Ar–SiH4–H2 plasma during transition from a-Si to nc-Si film deposition

T Moiseev  Plasma Sources Science and Technology 2011  20 025007
IOPscience 
[3]

Challenges of introducing quantitative elementary reactions in multiscale models of thin film deposition

Alessandro Barbato and Carlo Cavallotti  physica status solidi (b) 2010  n/a
CrossRef 
[4]

Current literature in mass spectrometry

Journal of Mass Spectrometry 2009  44 1262
CrossRef 
[5]

Langmuir probe plasma parameters and kinetic rates in a Ar–SiH4–H2 plasma during nc-Si films deposition for photovoltaic applications

T Moiseev et al  Journal of Physics D: Applied Physics 2009  42 225202
IOPscience 
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