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Morphological, optical and electrical properties of CdZnO films prepared by sol–gel method

Yasemin Caglar1,3, Mujdat Caglar1, Saliha Ilican1 and Aytunc Ates2

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CdZnO films were deposited by the sol–gel spin coating method onto glass substrates. ZnO, Cd(0.25)Zn(0.75)O, Cd(0.50)Zn(0.50)O, Cd(0.75)Zn(0.25)O, CdO films were deposited using different rates of cadmium acetate dehydrate and zinc acetate dehydrate solutions. These values in parentheses refer to the ratio in solution. The dried and annealing temperatures were selected to be 300 °C and 500 °C in air, respectively. The XRD patterns show polycrystalline nature. It was observed that the crystal structure changes from wurtzite (ZnO) to cubic (CdO) depending on the Zn and Cd proportions in the CdZnO structure. The optical properties of these films have been investigated by means of the optical transmittance measurement. The absorption band edges of films shift from 3.26 to 2.31 eV. The morphological characterizations of the films have been performed by SEM and AFM. In particular, the clusters formed from the nanostructured particles were shown in the SEM image of the Cd(0.75)Zn(0.25)O film. The electrical measurements show that the CdZnO films have semiconducting behaviour and are very sensitive to light.


PACS

68.55.-a Thin film structure and morphology

73.61.Ga II-VI semiconductors

68.37.Ps Atomic force microscopy (AFM)

81.20.Fw Sol-gel processing, precipitation

78.66.Hf II-VI semiconductors

68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Subjects

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 6 (21 March 2009)

Received 15 October 2008, in final form 5 February 2009

Published 3 March 2009



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