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Characterization of the back surface reflection in InP using femtosecond luminescence up-conversion

X M Wen1,2,3, C Lincoln1, T A Smith1, L V Dao2 and P Hannaford2

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In this investigation we study the behaviour of the emission from back surface reflection in InP using a femtosecond resolution up-conversion technique. The contributions from the direct emission and the back surface reflection are well distinguished. The experiments show unambiguously that the secondary rise in the time evolution of the luminescence originates from back surface reflection. Furthermore the emission from back surface reflection is used for a second excitation in the semiconductor nanostructures.


PACS

78.55.Cr III-V semiconductors

78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 4 (21 February 2009)

Received 30 July 2008, in final form 18 December 2008

Published 30 January 2009



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