M M Alam et al 2009 J. Phys. D: Appl. Phys. 42 225307 doi:10.1088/0022-3727/42/22/225307
M M Alam1,3, F Olabanji Lucas1, D Danieluk2, A L Bradley2, K V Rajani1, S Daniels1 and P J McNally1
Show affiliationsCuprous halides are among the most studied inorganic materials for excitonic related linear/non-linear optical processes due to their large excitonic binding energies (~190 and 108 meV for CuCl and CuBr, respectively). In recent years, we have studied CuCl thin films deposited by vacuum evaporation and sputtering techniques on a variety of substrates. We now report on the extension of this research to the deposition of CuCl nanocrystals on flexible substrates via a spin-on technology. In this study, we present the synthesis, deposition and characterization of CuCl nanocrystals embedded in organic polysilsesquioxane (PSSQ) films on a variety of substrates via the spin coating method. The nanocrystals were synthesized by a complexation–reduction–precipitation mechanism reaction of CuCl2
2H2O, alpha D-glucose and de-ionized (DI) water with a PSSQ based solution as the host matrix material. The deposited films were heated at 120 °C for durations between 1 and 24 h in vacuo. The room temperature UV–Vis absorption spectra for all hybrid films, except the as-deposited film, showed both Z1,2 and Z3 excitonic absorption features. Room temperature photoluminescence measurements of all heated films reveal very intense Z3 excitonic emission at 3.221 eV. Room temperature x-ray diffraction (XRD) of the as-deposited films gave no evidence of the crystallization of CuCl. However, after heating the films, XRD confirmed the preferential growth of CuCl nanocrystals whose average size is ≈25–45 nm in the
1 1 1
orientation. The CuCl hybrid films showed bright electroluminescent emission at 384 nm when subjected to an ac voltage of about 100 V peak to peak.
81.07.Bc Nanocrystalline materials
Condensed matter: electrical, magnetic and optical
Issue 22 (21 November 2009)
Received 4 August 2009, in final form 24 September 2009
Published 30 October 2009
M M Alam et al 2009 J. Phys. D: Appl. Phys. 42 225307
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