T Serin et al 2009 J. Phys. D: Appl. Phys. 42 225108 doi:10.1088/0022-3727/42/22/225108
T Serin, S Gürakar, N Serin, N Yıldırım and F Özyurt Kuş
Show affiliationsCu2O thin films were chemically deposited on single-crystal p-Si substrates to form Cu2O/p-Si heterojunctions. The structure of the Cu2O films was analysed by x-ray diffraction spectroscopy and UV–Vis–NIR transmittance spectra. In order to investigate the dark current transport mechanism in Cu2O/p-Si heterojunctions the current–voltage characteristics were measured in the temperature range 120–320 K and capacitance–voltage characteristics at a high frequency of ~1 MHz at room temperature. The I–V–T characteristics revealed that the forward current was determined by trap-assisted multi-step tunnelling. The activation energy determined from the saturation current and the junction built-in potential determined from the capacitance–voltage characteristics were about 0.18 eV and 1.10 V at room temperature, respectively.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.-a Thin film structure and morphology
78.40.Ha Other nonmetallic inorganics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
Issue 22 (21 November 2009)
Received 1 July 2009, in final form 2 October 2009
Published 6 November 2009
T Serin et al 2009 J. Phys. D: Appl. Phys. 42 225108
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