Shojiro Komatsu et al 2009 J. Phys. D: Appl. Phys. 42 225107 doi:10.1088/0022-3727/42/22/225107
Shojiro Komatsu1, Yuhei Sato2, Daisuke Hirano3, Takuya Nakamura4, Kazunori Koga5, Atsushi Yamamoto6, Takahiro Nagata1, Toyohiro Chikyo1, Takayuki Watanabe2, Takeo Takizawa3, Katsumitsu Nakamura3, Takuya Hashimoto3 and Masaharu Shiratani5
Show affiliationsA heterojunction of p-type sp3-bonded boron nitride (BN) and n-type Si fabricated by laser–plasma synchronous chemical vapour deposition (CVD) showed excellent rectifying properties and proved to work as a solar cell with photovoltaic conversion efficiency of 1.76%. The BN film was deposited on an n-type Si (1 0 0) substrate by plasma CVD from B2H6 + NH3 + Ar while doping of Si into the BN film was induced by the simultaneous irradiation of an intense excimer laser with a pulse power of 490 mJ cm−2, at a wavelength of 193 nm and at a repetition rate of 20 Hz. The source of dopant Si was supposed to be the Si substrate ablated at the initial stage of the film growth. The laser enhanced the doping (and/or diffusion) of Si into BN as well as the growth of sp3-bonded BN simultaneously in this method. P-type conduction of BN films was determined by the hot (thermoelectric) probe method. The BN/Si heterodiode with an essentially transparent p-type BN as a front layer is supposed to efficiently absorb light reaching the active region so as to potentially result in high efficiency.
84.60.Jt Photoelectric conversion: solar cells and arrays
61.72.uj III–V and II–VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Issue 22 (21 November 2009)
Received 8 July 2009, in final form 29 September 2009
Published 6 November 2009
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