R Ang et al 2009 J. Phys. D: Appl. Phys. 42 225104 doi:10.1088/0022-3727/42/22/225104
R Ang1,2, T P Chen1, Z Liu1, J I Wong1 and M D Yi1
Show affiliationsWe have investigated the current conduction of NiO thin film embedded with Ni nanocrystals (nc-Ni) and the influence of charging in the nc-Ni/NiO thin film on the current transport. The hole trapping in the thin film under a negative charging voltage is found to greatly increase the current conduction measured at a positive voltage due to the enhancement of electric field at the interface between the thin film and Si substrate. Moreover, the current–voltage (I–V) characteristic follows a power-law relationship. In addition, the dc resistance of the thin film strongly depends on the magnitude of the charging voltage and charging time. These results could be used to realize a charging-controlled resistive memory effect.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
Issue 22 (21 November 2009)
Received 14 July 2009, in final form 25 September 2009
Published 27 October 2009
R Ang et al 2009 J. Phys. D: Appl. Phys. 42 225104
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