B Alemán et al 2009 J. Phys. D: Appl. Phys. 42 225101 doi:10.1088/0022-3727/42/22/225101
B Alemán, P Hidalgo, P Fernández and J Piqueras
Show affiliationsBi doped ZnO nanowires and rods have been grown by a catalyst free evaporation–deposition method with precursors containing either ZnO and Bi2O3 or ZnS and Bi2O3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15–0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I–V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.uj III–V and II–VI semiconductors
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.07.-b Nanoscale materials and structures: fabrication and characterization
Condensed matter: electrical, magnetic and optical
Issue 22 (21 November 2009)
Received 22 July 2009, in final form 23 September 2009
Published 26 October 2009
B Alemán et al 2009 J. Phys. D: Appl. Phys. 42 225101
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