J Y T Huang et al 2009 J. Phys. D: Appl. Phys. 42 025108 doi:10.1088/0022-3727/42/2/025108
Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
J Y T Huang1, L J Mawst1, T F Kuech2, X Song3, S E Babcock3, C S Kim4, I Vurgaftman4, J R Meyer4 and A L Holmes Jr5
Show affiliationsInGaAs/GaAsSb type-II 'W' quantum wells (QWs) grown on InP substrates by metalorganic vapour phase epitaxy were investigated for potential emission wavelengths in the mid-infrared spectral region. Design studies using an 8-band k 
p Hamiltonian model indicate that emission wavelengths near 3 µm should be achievable without strain relaxation. Improved electron confinement can be achieved by adding higher-energy band gap alloys such as AlAsSb or GaInP around the type-II 'W' active region. Comparisons of the simulations with experiment indicate that photoluminescence (PL) spectra are consistent with a type-II band alignment. 4-period type-II 'W' In0.8Ga0.2As (~4.0 nm)/GaAs0.35Sb0.65 (~1.5 nm) QWs separated by InP (5 nm) or AlAs0.767Sb0.233 (1.5 nm) barrier layers, demonstrate room-temperature PL emission at ~2.1 µm
- PACS
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78.30.Fs III-V and II-VI semiconductors
73.20.At Surface states, band structure, electron density of states
- Subjects
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Condensed matter: electrical, magnetic and optical
- Dates
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Issue 2 (21 January 2009)
Received 11 August 2008, in final form 22 October 2008
Published 18 December 2008
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Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
J Y T Huang et al 2009 J. Phys. D: Appl. Phys. 42 025108
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