Y Wang and J Wang 2009 J. Phys. D: Appl. Phys. 42 162001 doi:10.1088/0022-3727/42/16/162001
Y Wang and J Wang1
Show affiliationsThe charged defective structure in Bi1−xLaxFeO3 (BLF) and La-10% and Mg-2% co-doped BiFeO3 (BLFM) thin films as well as their relations to leakage and dielectric relaxation behaviour are investigated. Through temperature-dependent conductivity and x-ray photoelectron spectroscopy analyses, it is demonstrated that La doping suppresses but Mg doping increases the concentration of both oxygen vacancies (OVs) and Fe2+ ions. Correspondingly, the leakage mechanism evolves from grain boundary and space charge limited conduction of BLF (x = 0.2 and 0.1) to Poole–Frenkel emission of BLFM and BiFeO3. Although the dielectric relaxation originates from the migration of OVs, the formation of defect complexes between the acceptors and OVs is responsible for the increased activation energy of the BLFM film.
75.80.+q Magnetomechanical and magnetoelectric effects, magnetostriction
77.55.+f Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
Issue 16 (21 August 2009)
Received 21 May 2009, in final form 30 June 2009
Published 23 July 2009
Y Wang and J Wang 2009 J. Phys. D: Appl. Phys. 42 162001
D Rittel 2009 J. Phys. D: Appl. Phys. 42 214009
H Emmerich 2009 J. Phys.: Condens. Matter 21 464103
M Singh et al 2008 J. Phys. B: At. Mol. Opt. Phys. 41 065301
Masataka Oko et al 2009 J. Phys.: Conf. Ser. 190 012016
M.N.A. Beurskens et al 2009 Nucl. Fusion 49 125006
X W Zhao et al 2007 Nanotechnology 18 485608
Roger Penrose 2009 J. Phys.: Conf. Ser. 174 012001
Donato Bini et al 2009 Class. Quantum Grav. 26 225006
Jia Zhang et al 2009 Nanotechnology 20 295603